FQB27P06TM Generic image

FQB27P06TM

Part No
FQB27P06TM
Manufacturer
onsemi
Description
ON SEMICONDUCTOR - FQB27P06TM - MOSFET Transistor, P Channel, 27 A, -60 V, 0.055 ohm, -10 V, -4 V
Datasheet
FQB27P06TM
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 27 A
    Current Rating -27 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 70 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Dual Supply Voltage 60 V
    Element Configuration Single
    Fall Time 90 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.4 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 120 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 3.75 W
    Rds On Max 70 mΩ
    Resistance 70 MΩ
    Rise Time 185 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination SMD/SMT
    Threshold Voltage -4 V
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 18 ns
    Voltage Rating (DC) -60 V
    Case/Package D2PAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
    Length 10.67 mm
    Width 9.65 mm
    added to cart View cart