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FQAF11N90C
- Part No
- FQAF11N90C
- Manufacturer
- onsemi
- Description
- N-channel Power Mosfet, Qfet®, 900 V, 7 A, 1.1 Ω, TO-3PF
- Datasheet
- FQAF11N90C
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 7 A |
| Current Rating | 11 A |
| Drain to Source Breakdown Voltage | 900 V |
| Drain to Source Resistance | 1.1 Ω |
| Drain to Source Voltage (Vdss) | 900 V |
| Element Configuration | Single |
| Fall Time | 85 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 3.29 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 120 W |
| Min Breakdown Voltage | 900 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 120 W |
| Rds On Max | 1.1 Ω |
| Rise Time | 130 ns |
| Schedule B | 8541290080 |
| Turn-Off Delay Time | 130 ns |
| Turn-On Delay Time | 60 ns |
| Voltage Rating (DC) | 900 V |
| Case/Package | SC |
| Mount | Through Hole |
| Number of Terminals | 3 |
| Weight | 6.962 g |
| Height | 29.9 mm |
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