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FQB6N40CTM
- Part No
- FQB6N40CTM
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, QFET®, 400 V, 6 A, 1.0 Ω, D2PAK
- Datasheet
- FQB6N40CTM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6 A |
| Current Rating | 6 A |
| Drain to Source Breakdown Voltage | 400 V |
| Drain to Source Resistance | 1 Ω |
| Drain to Source Voltage (Vdss) | 400 V |
| Element Configuration | Single |
| Fall Time | 38 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 625 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 73 W |
| Min Breakdown Voltage | 400 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 73 W |
| Rds On Max | 1 Ω |
| Rise Time | 65 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Turn-Off Delay Time | 21 ns |
| Turn-On Delay Time | 13 ns |
| Voltage Rating (DC) | 400 V |
| Case/Package | D2PAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 1.31247 g |
| Height | 4.83 mm |
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