FQA65N20 Generic image

FQA65N20

Part No
FQA65N20
Manufacturer
onsemi
Description
N-Channel Power MOSFET, QFET®, 200 V, 65 A, 32 mΩ, TO-3P
Datasheet
FQA65N20
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 65 A
    Current Rating 65 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 32 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 275 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 7.9 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 310 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 310 W
    Rds On Max 32 mΩ
    Rise Time 640 ns
    Threshold Voltage 5 V
    Turn-Off Delay Time 340 ns
    Turn-On Delay Time 120 ns
    Voltage Rating (DC) 200 V
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 18.9 mm
    Length 15.8 mm
    Width 5 mm
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