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FQA7N80C_F109
- Part No
- FQA7N80C_F109
- Manufacturer
- onsemi
- Description
- N-channel Power Mosfet, Qfet®, 800 V, 7 A, 1.9 Ω, TO-3P
- Datasheet
- FQA7N80C_F109
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 7 A |
| Drain to Source Breakdown Voltage | 800 V |
| Drain to Source Resistance | 1.9 Ω |
| Drain to Source Voltage (Vdss) | 800 V |
| Element Configuration | Single |
| Fall Time | 60 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.68 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 198 W |
| Min Breakdown Voltage | 800 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 198 W |
| Rds On Max | 1.9 Ω |
| Rise Time | 100 ns |
| Turn-Off Delay Time | 50 ns |
| Turn-On Delay Time | 35 ns |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 6.401 g |
| Height | 18.9 mm |
| Length | 15.8 mm |
| Width | 5 mm |
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