FQA8N100C Generic image

FQA8N100C

Part No
FQA8N100C
Manufacturer
onsemi
Description
N-channel Power Mosfet, Qfet®, 1000 V, 8.0 A, 1.45 Ω, TO-3P
Datasheet
FQA8N100C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Current Rating 8 A
    Drain to Source Breakdown Voltage 1 kV
    Drain to Source Resistance 1.45 Ω
    Drain to Source Voltage (Vdss) 1 kV
    Element Configuration Single
    Fall Time 80 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 3.22 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 225 W
    Min Breakdown Voltage 1 kV
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 225 W
    Rds On Max 1.45 Ω
    Resistance 1.45 Ω
    Rise Time 95 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 122 ns
    Turn-On Delay Time 50 ns
    Voltage Rating (DC) 1 kV
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 23.8 mm
    Length 15.8 mm
    Width 5 mm
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