FQAF16N50 Generic image

FQAF16N50

Part No
FQAF16N50
Manufacturer
onsemi
Description
N-Channel Power MOSFET, QFET®, 500 V, 11.3 A, 320 mΩ, TO-3PF
Datasheet
FQAF16N50
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.3 A
    Current Rating 11.3 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 320 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 100 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 3 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 110 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 110 W
    Rds On Max 320 mΩ
    Rise Time 180 ns
    Turn-Off Delay Time 130 ns
    Turn-On Delay Time 45 ns
    Voltage Rating (DC) 500 V
    Case/Package SC
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.962 g
    Height 16.7 mm
    Length 15.7 mm
    Width 5.7 mm
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