FQB7N60TM Generic image

FQB7N60TM

Part No
FQB7N60TM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, QFET®, 600 V, 7.4 A, 1 Ω, D2PAK
Datasheet
FQB7N60TM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7.4 A
    Current Rating 7.4 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 1 Ω
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 60 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.43 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 3.13 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 3.13 W
    Rds On Max 1 Ω
    Resistance 1 Ω
    Rise Time 80 ns
    Turn-Off Delay Time 65 ns
    Turn-On Delay Time 30 ns
    Voltage Rating (DC) 600 V
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 4.83 mm
    Length 10.67 mm
    Width 9.65 mm
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