FQB8P10TM Generic image

FQB8P10TM

Part No
FQB8P10TM
Manufacturer
onsemi
Description
Power MOSFET, P-Channel, QFET®, -100 V, -8 A, 530 mΩ, D2PAK
Datasheet
FQB8P10TM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Current Rating -8 A
    Drain to Source Breakdown Voltage -100 V
    Drain to Source Resistance 530 mΩ
    Drain to Source Voltage (Vdss) -100 V
    Element Configuration Single
    Fall Time 35 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 470 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 65 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.75 W
    Rds On Max 530 mΩ
    Resistance 530 mΩ
    Rise Time 110 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 20 ns
    Turn-On Delay Time 11 ns
    Voltage Rating (DC) -100 V
    Case/Package D2PAK
    Mount Surface Mount
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
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