FQB7P20TM Generic image

FQB7P20TM

Part No
FQB7P20TM
Manufacturer
onsemi
Description
P-Channel Power MOSFET, QFET®, -200 V, -7.3 A, 690 mΩ, D2PAK
Datasheet
FQB7P20TM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7.3 A
    Current Rating -7.3 A
    Drain to Source Breakdown Voltage -200 V
    Drain to Source Resistance 690 mΩ
    Drain to Source Voltage (Vdss) -200 V
    Element Configuration Single
    Fall Time 42 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 770 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 90 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 3.13 W
    Rds On Max 690 mΩ
    Resistance 690 MΩ
    Rise Time 110 ns
    Schedule B 8541290080
    Turn-Off Delay Time 30 ns
    Turn-On Delay Time 15 ns
    Voltage Rating (DC) -200 V
    Case/Package D2PAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 5.08 mm
    Length 10.67 mm
    Width 9.65 mm
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