FQB6N80TM Generic image

FQB6N80TM

Part No
FQB6N80TM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, QFET®, 800 V, 5.8 A, 1.95 Ω, D2PAK
Datasheet
FQB6N80TM
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.8 A
    Current Rating 5.8 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 1.95 Ω
    Drain to Source Voltage (Vdss) 800 V
    Element Configuration Single
    Fall Time 45 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.5 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 158 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 3.13 W
    Rds On Max 1.95 Ω
    Resistance 1.95 Ω
    Rise Time 70 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 65 ns
    Turn-On Delay Time 30 ns
    Voltage Rating (DC) 800 V
    Case/Package D2PAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 1.31247 g
    Height 4.83 mm
    Length 10.67 mm
    Width 9.65 mm
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