FQA55N25 Generic image

FQA55N25

Part No
FQA55N25
Manufacturer
onsemi
Description
N-Channel Power MOSFET, QFET®, 250 V, 55 A, 40 mΩ, TO-3P
Datasheet
FQA55N25
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 55 A
    Current Rating 55 A
    Drain to Source Breakdown Voltage 250 V
    Drain to Source Resistance 40 mΩ
    Drain to Source Voltage (Vdss) 250 V
    Element Configuration Single
    Fall Time 250 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 6.25 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 310 W
    Min Breakdown Voltage 250 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 310 W
    Rds On Max 40 mΩ
    Resistance 40 mΩ
    Rise Time 700 ns
    Threshold Voltage 5 V
    Turn-Off Delay Time 200 ns
    Turn-On Delay Time 100 ns
    Voltage Rating (DC) 250 V
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 23.8 mm
    Length 15.8 mm
    Width 5 mm
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