FQP2N60C Generic image

FQP2N60C

Part No
FQP2N60C
Manufacturer
onsemi
Description
Power Mosfet, N-channel, Qfet®, 600 V, 2 A, 4.7 Ω, TO-220
Datasheet
FQP2N60C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2 A
    Current Rating 2 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 4.7 Ω
    Drain to Source Voltage (Vdss) 600 V
    Dual Supply Voltage 600 V
    Element Configuration Single
    Fall Time 28 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 235 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 54 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape (CT)
    Power Dissipation 54 W
    Rds On Max 4.7 Ω
    Resistance 4.7 Ω
    Rise Time 25 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Termination Through Hole
    Threshold Voltage 4 V
    Turn-Off Delay Time 24 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) 600 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.1 mm
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