FQP3N30 Generic image

FQP3N30

Part No
FQP3N30
Manufacturer
onsemi
Description
Transistor, Mosfet, N-channel, 300V V(br)dss, 3.2A I(d), TO-220
Datasheet
FQP3N30
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.2 A
    Current Rating 3.2 A
    Drain to Source Breakdown Voltage 300 V
    Drain to Source Resistance 2.2 Ω
    Drain to Source Voltage (Vdss) 300 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 230 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 55 W
    Min Breakdown Voltage 300 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 55 W
    Rds On Max 2.2 Ω
    Rise Time 40 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 1.65 V
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 10 ns
    Voltage Rating (DC) 300 V
    Case/Package TO-220
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 16.51 mm
    Length 10.67 mm
    Width 4.7 mm
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