FQP85N06 Generic image

FQP85N06

Part No
FQP85N06
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, QFET®, 60 V, 85 A, 10 mΩ, TO-220
Datasheet
FQP85N06
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 85 A
    Current 85 A
    Current Rating 85 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Dual Supply Voltage 60 V
    Element Configuration Single
    Fall Time 170 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 4.12 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 160 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 160 W
    Rds On Max 10 mΩ
    Resistance 10 MΩ
    Rise Time 230 ns
    Schedule B 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 175 ns
    Turn-On Delay Time 40 ns
    Voltage 60 V
    Voltage Rating (DC) 60 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 4.535924 g
    Height 20.4 mm
    Length 10.1 mm
    Width 4.7 mm
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