FQP8N80C Generic image

FQP8N80C

Part No
FQP8N80C
Manufacturer
onsemi
Description
Power Mosfet, N-channel, Qfet®, 800 V, 8 A, 1.55 Ω, TO-220
Datasheet
FQP8N80C
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 8 A
    Current Rating 8 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 1.55 Ω
    Drain to Source Voltage (Vdss) 800 V
    Element Configuration Single
    Fall Time 70 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 2.05 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 178 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 178 W
    Rds On Max 1.55 Ω
    Rise Time 110 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|8541290080|85
    Threshold Voltage 5 V
    Turn-Off Delay Time 65 ns
    Turn-On Delay Time 40 ns
    Voltage Rating (DC) 800 V
    Case/Package TO-220AB
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.1 mm
    Width 4.7 mm
    added to cart View cart