FQP6N80C Generic image

FQP6N80C

Part No
FQP6N80C
Manufacturer
onsemi
Description
Power Mosfet, N-channel, Qfet®, 800 V, 5.5 A, 2.5 Ω, TO-220
Datasheet
FQP6N80C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.5 A
    Current Rating 5.5 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 2.5 Ω
    Drain to Source Voltage (Vdss) 800 V
    Dual Supply Voltage 800 V
    Element Configuration Single
    Fall Time 44 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.31 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 158 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 158 W
    Rds On Max 2.5 Ω
    Resistance 2.5 Ω
    Rise Time 65 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Termination Through Hole
    Threshold Voltage 5 V
    Turn-Off Delay Time 47 ns
    Turn-On Delay Time 26 ns
    Voltage Rating (DC) 800 V
    Case/Package TO-220AB
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.1 mm
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