FQP3N60C Generic image

FQP3N60C

Part No
FQP3N60C
Manufacturer
onsemi
Description
Power Mosfet, N-channel, Qfet®, 600 V, 3 A, 3.4 Ω, TO-220
Datasheet
FQP3N60C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 3.4 Ω
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 35 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 565 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 75 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 75 W
    Rds On Max 3.4 Ω
    Resistance 3.4 Ω
    Rise Time 30 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 12 ns
    Case/Package TO-220AB
    Mount Through Hole
    Number of Terminals 3
    Weight 1.8 g
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