FQP33N10 Generic image

FQP33N10

Part No
FQP33N10
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, QFET®, 100 V, 33 A, 52 mΩ, TO-220
Datasheet
FQP33N10
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 33 A
    Current Rating 33 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 52 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Dual Supply Voltage 100 V
    Element Configuration Single
    Fall Time 110 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.5 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 127 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Nominal Vgs 4 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 127 W
    Rds On Max 52 mΩ
    Resistance 52 mΩ
    Rise Time 195 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 80 ns
    Turn-On Delay Time 15 ns
    Voltage Rating (DC) 100 V
    Case/Package TO-220AB
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.67 mm
    Width 4.83 mm
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