FQP30N06L Generic image

FQP30N06L

Part No
FQP30N06L
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 32 A, 35 mΩ, TO-220
Datasheet
FQP30N06L
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 32 A
    Current Rating 32 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 45 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 110 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.04 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 79 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs 2.5 V
    Number of Elements 1
    Power Dissipation 79 W
    Rds On Max 35 mΩ
    Resistance 35 mΩ
    Rise Time 210 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 15 ns
    Voltage Rating (DC) 60 V
    Case/Package TO-220
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 16.3 mm
    Length 10.67 mm
    Width 4.7 mm
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