FQP22N30 Generic image

FQP22N30

Part No
FQP22N30
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, QFET®, 300 V, 21 A, 160 mΩ, TO-220
Datasheet
FQP22N30
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 21 A
    Current Rating 21 A
    Drain to Source Breakdown Voltage 300 V
    Drain to Source Resistance 160 mΩ
    Drain to Source Voltage (Vdss) 300 V
    Element Configuration Single
    Fall Time 100 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 2.2 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 170 W
    Min Breakdown Voltage 300 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 170 W
    Rds On Max 160 mΩ
    Resistance 160 MΩ
    Rise Time 230 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 5 V
    Turn-Off Delay Time 85 ns
    Turn-On Delay Time 35 ns
    Voltage Rating (DC) 300 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.1 mm
    Width 4.7 mm
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