FQP3P20 Generic image

FQP3P20

Part No
FQP3P20
Manufacturer
onsemi
Description
Power Mosfet, P-channel, Qfet®, -200 V, -2.8 A, 2.7 Ω, TO-220
Datasheet
FQP3P20
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.8 A
    Current 28 A
    Current Rating -2.8 A
    Drain to Source Breakdown Voltage -200 V
    Drain to Source Resistance 2.7 Ω
    Drain to Source Voltage (Vdss) -200 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 250 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 52 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 52 W
    Rds On Max 2.7 Ω
    Resistance 2.7 Ω
    Rise Time 35 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -5 V
    Turn-Off Delay Time 12 ns
    Turn-On Delay Time 8.5 ns
    Voltage 200 V
    Voltage Rating (DC) -200 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Height 20.4 mm
    Length 10.67 mm
    Width 4.7 mm
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