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FPF2C110BI07AS2
- Part No
- FPF2C110BI07AS2
- Manufacturer
- onsemi
- Description
- Power Integrated Module (PIM), F2, SiC Diode + MOSFET + IGBT, 650 V
- Datasheet
- FPF2C110BI07AS2
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Collector Emitter Breakdown Voltage | 650 V |
| Collector Emitter Saturation Voltage | 2.3 V |
| Collector Emitter Voltage (VCEO) | 650 V |
| Continuous Collector Current | 40 A |
| Isolation Voltage | 2.5 kV |
| Max Collector Current | 40 A |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 158 W |
| Min Operating Temperature | -40 °C |
| Number of Elements | 6 |
| Turn-Off Delay Time | 26 ns |
| Turn-On Delay Time | 125 ns |
| Mount | Through Hole |
| Number of Terminals | 30 |
| Weight | 45 g |
| Height | 12.35 mm |
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