FQA140N10 Generic image

FQA140N10

Part No
FQA140N10
Manufacturer
onsemi
Description
N-Channel Power MOSFET, QFET®, 100V, 140A, 10mΩ, TO-3P
Datasheet
FQA140N10
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 140 A
    Current Rating 140 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 10 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 360 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 7.9 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 375 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 375 W
    Rds On Max 10 mΩ
    Resistance 10 mΩ
    Rise Time 940 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 350 ns
    Turn-On Delay Time 75 ns
    Voltage Rating (DC) 100 V
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 23.8 mm
    Length 15.8 mm
    Width 5 mm
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