FQA24N50 Generic image

FQA24N50

Part No
FQA24N50
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, QFET®, 500 V, 24 A, 200 mΩ, TO-3P
Datasheet
FQA24N50
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 24 A
    Current Rating 24 A
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 200 mΩ
    Drain to Source Voltage (Vdss) 500 V
    Dual Supply Voltage 500 V
    Element Configuration Single
    Fall Time 155 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 4.5 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 290 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 290 W
    Rds On Max 200 mΩ
    Resistance 200 mΩ
    Rise Time 250 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 200 ns
    Turn-On Delay Time 80 ns
    Voltage Rating (DC) 500 V
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 6.401 g
    Height 23.8 mm
    Length 15.8 mm
    Width 5 mm
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