FQP2N80 Generic image

FQP2N80

Part No
FQP2N80
Manufacturer
onsemi
Description
Trans MOSFET N-CH 800V 2.4A 3-Pin(3+Tab) TO-220AB Rail
Datasheet
FQP2N80
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.4 A
    Current Rating 2.4 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 6.3 Ω
    Drain to Source Voltage (Vdss) 800 V
    Element Configuration Single
    Fall Time 28 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 550 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 85 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 85 W
    Rds On Max 6.3 Ω
    Rise Time 30 ns
    Turn-Off Delay Time 25 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 800 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 9.4 mm
    Length 10.1 mm
    Width 4.7 mm
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