FQP6N70 Generic image

FQP6N70

Part No
FQP6N70
Manufacturer
onsemi
Description
Transistor, mosfet, n-Channel, 700V V(Br)Dss, 6.2A I(D), to-220Ab Rohs Compliant: Yes
Datasheet
FQP6N70
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.2 A
    Current Rating 6.2 A
    Drain to Source Breakdown Voltage 700 V
    Drain to Source Resistance 1.5 Ω
    Drain to Source Voltage (Vdss) 700 V
    Element Configuration Single
    Fall Time 50 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.4 nF
    Max Operating Temperature 150 °C
    Max Power Dissipation 142 W
    Min Breakdown Voltage 700 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Rail/Tube
    Power Dissipation 142 W
    Rds On Max 1.5 Ω
    Rise Time 70 ns
    Turn-Off Delay Time 55 ns
    Turn-On Delay Time 25 ns
    Voltage Rating (DC) 700 V
    Case/Package TO-220AB
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
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