FQP7P06 Generic image

FQP7P06

Part No
FQP7P06
Manufacturer
onsemi
Description
Power MOSFET, P-Channel, QFET®, -60 V, -7 A, 410 mΩ, TO-220
Datasheet
FQP7P06
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 7 A
    Current Rating -7 A
    Drain to Source Breakdown Voltage -60 V
    Drain to Source Resistance 410 mΩ
    Drain to Source Voltage (Vdss) -60 V
    Dual Supply Voltage -60 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 295 pF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 45 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Nominal Vgs -4 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 45 W
    Rds On Max 410 mΩ
    Resistance 410 MΩ
    Rise Time 50 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -4 V
    Turn-Off Delay Time 7.5 ns
    Turn-On Delay Time 7 ns
    Voltage Rating (DC) -60 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.1 mm
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