FQP44N10 Generic image

FQP44N10

Part No
FQP44N10
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, QFET®, 100 V, 43.5 A, 39 mΩ, TO-220
Datasheet
FQP44N10
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 43.5 A
    Current Rating 43.5 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 39 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 100 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.8 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 146 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Packaging Tape & Reel (TR)
    Power Dissipation 146 W
    Rds On Max 39 mΩ
    Rise Time 190 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 90 ns
    Turn-On Delay Time 19 ns
    Voltage Rating (DC) 100 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 9.4 mm
    Length 10.1 mm
    Width 4.7 mm
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