FQD20N06TM Generic image

FQD20N06TM

Part No
FQD20N06TM
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, QFET®, 60 V, 16.8 A, 63 mΩ, DPAK
Datasheet
FQD20N06TM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 16.8 A
    Current 18 A
    Current Rating 16.8 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 63 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 590 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 38 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 63 mΩ
    Rise Time 45 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 20 ns
    Turn-On Delay Time 5 ns
    Voltage 55 V
    Voltage Rating (DC) 60 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.517 mm
    Length 6.6 mm
    Width 6.1 mm
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