FQP12P20 Generic image

FQP12P20

Part No
FQP12P20
Manufacturer
onsemi
Description
P-Channel Power MOSFET, QFET®, -200 V, -11.5 A, 470 mΩ, TO-220
Datasheet
FQP12P20
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 11.5 A
    Current Rating -11.5 A
    Drain to Source Breakdown Voltage -200 V
    Drain to Source Resistance 470 mΩ
    Drain to Source Voltage (Vdss) -200 V
    Dual Supply Voltage -200 V
    Element Configuration Single
    Fall Time 60 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 1.2 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 120 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Nominal Vgs -5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 120 W
    Rds On Max 470 mΩ
    Resistance 470 MΩ
    Rise Time 195 ns
    Schedule B 8541290080
    Termination Through Hole
    Threshold Voltage -5 V
    Turn-Off Delay Time 40 ns
    Turn-On Delay Time 20 ns
    Voltage Rating (DC) -200 V
    Case/Package TO-220-3
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Lead Pitch 2.54 mm
    Length 10.1 mm
    Width 4.7 mm
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