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FQP13N06L

Part No: FQP13N06L
Manufacturer: onsemi
Description: N-Channel Power MOSFET, Logic Level, QFET®, 60 V, 13.6 A, 110 mΩ, TO-220
Datasheet: FQP13N06L
Test Report: Available
Samples: Available

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Specification	Value
Continuous Drain Current (ID)	13.6 A
Current Rating	13.6 A
Drain to Source Breakdown Voltage	60 V
Drain to Source Resistance	140 mΩ
Drain to Source Voltage (Vdss)	60 V
Dual Supply Voltage	60 V
Element Configuration	Single
Fall Time	40 ns
Gate to Source Voltage (Vgs)	20 V
Input Capacitance	350 pF
Max Junction Temperature (Tj)	175 °C
Max Operating Temperature	175 °C
Max Power Dissipation	45 W
Min Breakdown Voltage	60 V
Min Operating Temperature	-55 °C
Nominal Vgs	2.5 V
Number of Channels	1
Number of Elements	1
Power Dissipation	45 W
Rds On Max	110 mΩ
Resistance	110 mΩ
Rise Time	90 ns
Schedule B	8541290080, 8541290080\|8541290080\|8541290080\|8541290080\|8541290080
Termination	Through Hole
Threshold Voltage	2.5 V
Turn-Off Delay Time	20 ns
Turn-On Delay Time	8 ns
Voltage Rating (DC)	60 V
Case/Package	TO-220-3
Contact Plating	Tin
Mount	Through Hole
Number of Pins	3
Number of Terminals	3
Weight	1.8 g
Height	20.4 mm
Length	10.1 mm
Width	4.7 mm