FQP50N06L Generic image

FQP50N06L

Part No
FQP50N06L
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, Logic Level, QFET®, 60 V, 52.4 A, 21 mΩ, TO-220
Datasheet
FQP50N06L
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 52.4 A
    Current Rating 52.4 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 25 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 145 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 1.63 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 121 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 121 W
    Rds On Max 21 mΩ
    Resistance 21 MΩ
    Rise Time 380 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2.5 V
    Turn-Off Delay Time 80 ns
    Turn-On Delay Time 20 ns
    Voltage Rating (DC) 60 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.1 mm
    Width 4.7 mm
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