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FQI8N60CTU
- Part No
- FQI8N60CTU
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, QFET®, 600 V, 7.5 A, 1.2 Ω, I2PAK
- Datasheet
- FQI8N60CTU
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 7.5 A |
| Current Rating | 8 A |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 1.2 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 64.5 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 1.255 nF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 147 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Power Dissipation | 3.13 W |
| Rds On Max | 1.2 Ω |
| Rise Time | 60.5 ns |
| Turn-Off Delay Time | 81 ns |
| Turn-On Delay Time | 16.5 ns |
| Voltage Rating (DC) | 600 V |
| Case/Package | TO-262-3 |
| Mount | Through Hole |
| Number of Terminals | 3 |
| Weight | 2.084 g |
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