FQD2N80TM Generic image

FQD2N80TM

Part No
FQD2N80TM
Manufacturer
onsemi
Description
N-Channel QFET® MOSFET 800V, 1.8A, 6.3Ω
Datasheet
FQD2N80TM
Test Report
Available
Samples
Available

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    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 1.8 A
    Current Rating 1.8 A
    Drain to Source Breakdown Voltage 800 V
    Drain to Source Resistance 6.3 Ω
    Drain to Source Voltage (Vdss) 800 V
    Element Configuration Single
    Fall Time 28 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 550 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 50 W
    Min Breakdown Voltage 800 V
    Min Operating Temperature -55 °C
    Nominal Vgs 5 V
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 2.5 W
    Rds On Max 6.3 Ω
    Resistance 6.3 Ω
    Rise Time 30 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 3 V
    Turn-Off Delay Time 25 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) 800 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.6 mm
    Width 6.1 mm
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