FQD5N60CTM Generic image

FQD5N60CTM

Part No
FQD5N60CTM
Manufacturer
onsemi
Description
N-channel Power Mosfet, Qfet®, 600 V, 2.8 A, 2.5 Ω, Dpak
Datasheet
FQD5N60CTM
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.8 A
    Current Rating 5 A
    Drain to Source Breakdown Voltage 600 V
    Drain to Source Resistance 2.5 Ω
    Drain to Source Voltage (Vdss) 600 V
    Element Configuration Single
    Fall Time 46 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 670 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 49 W
    Min Breakdown Voltage 600 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 2.5 Ω
    Resistance 2.5 Ω
    Rise Time 42 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 38 ns
    Turn-On Delay Time 10 ns
    Voltage Rating (DC) 600 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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