FQD4N20TM Generic image

FQD4N20TM

Part No
FQD4N20TM
Manufacturer
onsemi
Description
N-Channel QFET® MOSFET 200V, 3A, 1.4Ω
Datasheet
FQD4N20TM
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3 A
    Current Rating 3 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 1.4 Ω
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 220 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 30 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 1.4 Ω
    Resistance 1.4 Ω
    Rise Time 50 ns
    Turn-Off Delay Time 7 ns
    Turn-On Delay Time 7 ns
    Voltage Rating (DC) 200 V
    Case/Package DPAK
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    added to cart View cart