FQD5P10TM Generic image

FQD5P10TM

Part No
FQD5P10TM
Manufacturer
onsemi
Description
P-channel Power Mosfet, Qfet®, -100 V, -3.6 A, 1.05 Ω, Dpak
Datasheet
FQD5P10TM
Test Report
Available
Samples
Available

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    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 3.6 A
    Current 36 A
    Current Rating -3.6 A
    Drain to Source Breakdown Voltage -100 V
    Drain to Source Resistance 1.05 Ω
    Drain to Source Voltage (Vdss) -100 V
    Element Configuration Single
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 250 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 25 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Digi-Reel®
    Power Dissipation 2.5 W
    Rds On Max 1.05 Ω
    Rise Time 70 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Threshold Voltage -2 V
    Turn-Off Delay Time 12 ns
    Turn-On Delay Time 9 ns
    Voltage 100 V
    Voltage Rating (DC) -100 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Height 2.517 mm
    Length 6.73 mm
    Width 6.22 mm
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