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FQN1N60CTA
- Part No
- FQN1N60CTA
- Manufacturer
- onsemi
- Description
- N-channel Power Mosfet, Qfet®, 600 V, 0.3 A, 11.5 Ω, TO-92
- Datasheet
- FQN1N60CTA
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 300 mA |
| Drain to Source Breakdown Voltage | 600 V |
| Drain to Source Resistance | 11.5 Ω |
| Drain to Source Voltage (Vdss) | 600 V |
| Element Configuration | Single |
| Fall Time | 27 ns |
| Gate to Source Voltage (Vgs) | 30 V |
| Input Capacitance | 470 pF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 3 W |
| Min Breakdown Voltage | 600 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1 W |
| Rds On Max | 50 mΩ |
| Resistance | 11.5 Ω |
| Rise Time | 21 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 4 V |
| Turn-Off Delay Time | 13 ns |
| Turn-On Delay Time | 7 ns |
| Case/Package | TO-92-3 |
| Mount | Through Hole |
| Number of Pins | 3 |
| Number of Terminals | 3 |
| Weight | 240 mg |
| Height | 8.77 mm |
| Length | 5.2 mm |
| Width | 4.19 mm |
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