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FQD7N20LTM
- Part No
- FQD7N20LTM
- Manufacturer
- onsemi
- Description
- N-Channel Power MOSFET, Logic Level, QFET®, 200 V, 5.5 A, 750 mΩ, DPAK
- Datasheet
- FQD7N20LTM
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 5.5 A |
| Current Rating | 5.5 A |
| Drain to Source Breakdown Voltage | 200 V |
| Drain to Source Resistance | 780 mΩ |
| Drain to Source Voltage (Vdss) | 200 V |
| Element Configuration | Single |
| Fall Time | 65 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 500 pF |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 45 W |
| Min Breakdown Voltage | 200 V |
| Min Operating Temperature | -55 °C |
| Number of Elements | 1 |
| Packaging | Tape & Reel (TR) |
| Power Dissipation | 2.5 W |
| Rds On Max | 750 mΩ |
| Rise Time | 125 ns |
| Turn-Off Delay Time | 20 ns |
| Turn-On Delay Time | 12 ns |
| Voltage Rating (DC) | 200 V |
| Case/Package | DPAK |
| Mount | Surface Mount |
| Number of Pins | 3 |
| Number of Terminals | 2 |
| Weight | 260.37 mg |
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