FQP10N20C Generic image

FQP10N20C

Part No
FQP10N20C
Manufacturer
onsemi
Description
N-Channel Power MOSFET, QFET®, 200 V, 9.5 A, 360 mΩ, TO-220
Datasheet
FQP10N20C
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 9.5 A
    Current Rating 9.5 A
    Drain to Source Breakdown Voltage 200 V
    Drain to Source Resistance 360 mΩ
    Drain to Source Voltage (Vdss) 200 V
    Element Configuration Single
    Fall Time 72 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 510 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 72 W
    Min Breakdown Voltage 200 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 72 W
    Rds On Max 360 mΩ
    Resistance 360 mΩ
    Rise Time 92 ns
    Turn-Off Delay Time 70 ns
    Turn-On Delay Time 11 ns
    Voltage Rating (DC) 200 V
    Case/Package TO-220AB
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 9.4 mm
    Length 10.1 mm
    Width 4.7 mm
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