FQNL2N50BTA Generic image

FQNL2N50BTA

Part No
FQNL2N50BTA
Manufacturer
onsemi
Description
N-channel Power Mosfet, Qfet®, 500 V, 0.35 A, 5.3 Ω, TO-92L
Datasheet
FQNL2N50BTA
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 350 mA
    Current Rating 350 mA
    Drain to Source Breakdown Voltage 500 V
    Drain to Source Resistance 5.3 Ω
    Drain to Source Voltage (Vdss) 500 V
    Element Configuration Single
    Fall Time 25 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 230 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 1.5 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 1.5 W
    Rds On Max 5.3 Ω
    Rise Time 25 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 10 ns
    Turn-On Delay Time 6 ns
    Voltage Rating (DC) 500 V
    Case/Package TO-226-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 371.1027 mg
    Height 8 mm
    Length 4.9 mm
    Width 3.9 mm
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