FQD7N10LTM Generic image

FQD7N10LTM

Part No
FQD7N10LTM
Manufacturer
onsemi
Description
N-Channel Power MOSFET, Logic Level, QFET®, 100 V, 5.8 A, 350 mΩ, DPAK
Datasheet
FQD7N10LTM
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 5.8 A
    Current Rating 5.8 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 380 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 50 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 290 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 25 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Packaging Tape & Reel
    Power Dissipation 2.5 W
    Rds On Max 350 mΩ
    Resistance 350 mΩ
    Rise Time 100 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Threshold Voltage 2 V
    Turn-Off Delay Time 17 ns
    Turn-On Delay Time 9 ns
    Voltage Rating (DC) 100 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
    Length 6.6 mm
    Width 6.1 mm
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