FQD4P40TM Generic image

FQD4P40TM

Part No
FQD4P40TM
Manufacturer
onsemi
Description
P-channel Power Mosfet, Qfet®, -400 V, -2.7 A, 3.1 Ω, Dpak
Datasheet
FQD4P40TM
Test Report
Available
Samples
Available

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    Availability:
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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.7 A
    Current Rating -2.7 A
    Drain to Source Breakdown Voltage -400 V
    Drain to Source Resistance 3.1 Ω
    Drain to Source Voltage (Vdss) -400 V
    Element Configuration Single
    Fall Time 37 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 680 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 50 W
    Min Breakdown Voltage 400 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 2.5 W
    Rds On Max 3.1 Ω
    Rise Time 55 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 13 ns
    Voltage Rating (DC) -400 V
    Case/Package DPAK
    Contact Plating Tin
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 2
    Weight 260.37 mg
    Height 2.517 mm
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