FQP55N10 Generic image

FQP55N10

Part No
FQP55N10
Manufacturer
onsemi
Description
Power MOSFET, N-Channel, QFET®, 100 V, 55 A, 26 mΩ, TO-220
Datasheet
FQP55N10
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 55 A
    Current Rating 55 A
    Drain to Source Breakdown Voltage 100 V
    Drain to Source Resistance 26 mΩ
    Drain to Source Voltage (Vdss) 100 V
    Element Configuration Single
    Fall Time 140 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 2.73 nF
    Max Operating Temperature 175 °C
    Max Power Dissipation 155 W
    Min Breakdown Voltage 100 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 155 W
    Rds On Max 26 mΩ
    Resistance 26 mΩ
    Rise Time 250 ns
    Turn-Off Delay Time 110 ns
    Turn-On Delay Time 25 ns
    Voltage Rating (DC) 100 V
    Case/Package TO-220AB
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 9.4 mm
    Length 10.1 mm
    Width 4.7 mm
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