FQP50N06 Generic image

FQP50N06

Part No
FQP50N06
Manufacturer
onsemi
Description
Transistor FQP50N06 MOSFET N-Channel 60 Volt 50 Amp TO-220
Datasheet
FQP50N06
Test Report
Available
Samples
Available

Request for Quote

    Availability:
    Available

    Product Specification

    Specification Value
    Continuous Drain Current (ID) 50 A
    Current Rating 50 A
    Drain to Source Breakdown Voltage 60 V
    Drain to Source Resistance 22 mΩ
    Drain to Source Voltage (Vdss) 60 V
    Element Configuration Single
    Fall Time 65 ns
    Gate to Source Voltage (Vgs) 25 V
    Input Capacitance 1.54 nF
    Max Junction Temperature (Tj) 175 °C
    Max Operating Temperature 175 °C
    Max Power Dissipation 120 W
    Min Breakdown Voltage 60 V
    Min Operating Temperature -55 °C
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 120 W
    Rds On Max 22 mΩ
    Resistance 22 mΩ
    Rise Time 105 ns
    Schedule B 8541290080
    Threshold Voltage 4 V
    Turn-Off Delay Time 60 ns
    Turn-On Delay Time 15 ns
    Voltage Rating (DC) 60 V
    Case/Package TO-220-3
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.1 mm
    Width 4.7 mm
    added to cart View cart