FQP3P50 Generic image

FQP3P50

Part No
FQP3P50
Manufacturer
onsemi
Description
Power Mosfet, P-channel, Qfet®, -500 V, -2.7 A, 4.9 Ω, TO-220
Datasheet
FQP3P50
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 2.7 A
    Current Rating -2.7 A
    Drain to Source Breakdown Voltage -500 V
    Drain to Source Resistance 4.9 Ω
    Drain to Source Voltage (Vdss) -500 V
    Dual Supply Voltage -500 V
    Element Configuration Single
    Fall Time 45 ns
    Gate to Source Voltage (Vgs) 30 V
    Input Capacitance 660 pF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 85 W
    Min Breakdown Voltage 500 V
    Min Operating Temperature -55 °C
    Nominal Vgs -5 V
    Number of Channels 1
    Number of Elements 1
    Power Dissipation 85 W
    Rds On Max 4.9 Ω
    Resistance 4.9 Ω
    Rise Time 56 ns
    Schedule B 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 35 ns
    Turn-On Delay Time 12 ns
    Voltage Rating (DC) -500 V
    Case/Package TO-220AB
    Contact Plating Tin
    Mount Through Hole
    Number of Pins 3
    Number of Terminals 3
    Weight 1.8 g
    Height 20.4 mm
    Length 10.1 mm
    Width 4.7 mm
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