FDT459N Generic image

FDT459N

Part No
FDT459N
Manufacturer
onsemi
Description
N-Channel Enhancement Mode Field Effect Transistor 30V, 6.5A, 35mΩ
Datasheet
FDT459N
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6.5 A
    Current Rating 6.5 A
    Drain to Source Breakdown Voltage 30 V
    Drain to Source Resistance 35 mΩ
    Drain to Source Voltage (Vdss) 30 V
    Element Configuration Single
    Fall Time 16 ns
    Gate to Source Voltage (Vgs) 20 V
    Input Capacitance 365 pF
    Max Operating Temperature 150 °C
    Max Power Dissipation 3 W
    Min Breakdown Voltage 30 V
    Min Operating Temperature -55 °C
    Number of Elements 1
    Power Dissipation 3 W
    Rds On Max 35 mΩ
    Rise Time 8.2 ns
    Schedule B 8541290080, 8541290080|8541290080, 8541290080|8541290080|8541290080, 8541290080|8541290080|8541290080|8541290080
    Turn-Off Delay Time 6 ns
    Turn-On Delay Time 5.2 ns
    Voltage Rating (DC) 30 V
    Case/Package SOT-223
    Mount Surface Mount
    Number of Pins 3
    Number of Terminals 4
    Weight 250.2 mg
    Height 1.7 mm
    Length 6.7 mm
    Width 3.7 mm
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