FDT434P Generic image

FDT434P

Part No
FDT434P
Manufacturer
onsemi
Description
P-Channel PowerTrench® MOSFET, 2.5V Specified, -20V, -5.5A, 50mΩ
Datasheet
FDT434P
Test Report
Available
Samples
Available

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    Product Specification

    Specification Value
    Continuous Drain Current (ID) 6 A
    Current Rating -5.5 A
    Drain to Source Breakdown Voltage -20 V
    Drain to Source Resistance 50 mΩ
    Drain to Source Voltage (Vdss) -20 V
    Dual Supply Voltage 20 V
    Element Configuration Single
    Fall Time 30 ns
    Gate to Source Voltage (Vgs) 8 V
    Input Capacitance 1.187 nF
    Max Junction Temperature (Tj) 150 °C
    Max Operating Temperature 150 °C
    Max Power Dissipation 3 W
    Min Breakdown Voltage 20 V
    Min Operating Temperature -55 °C
    Nominal Vgs -600 mV
    Number of Channels 1
    Number of Elements 1
    Packaging Cut Tape
    Power Dissipation 1.1 W
    Rds On Max 50 mΩ
    Resistance 50 mΩ
    Rise Time 15 ns
    Termination SMD/SMT
    Threshold Voltage -600 mV
    Turn-Off Delay Time 45 ns
    Turn-On Delay Time 8 ns
    Voltage Rating (DC) -20 V
    Case/Package SOT-223
    Mount Surface Mount
    Number of Pins 4
    Number of Terminals 4
    Weight 250.2 mg
    Height 1.8 mm
    Length 6.5 mm
    Width 3.56 mm
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