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FDT86102LZ
- Part No
- FDT86102LZ
- Manufacturer
- onsemi
- Description
- N-Channel PowerTrench® MOSFET 100V, 6.6A, 28mΩ
- Datasheet
- FDT86102LZ
- Test Report
- Available
- Samples
- Available
Request for Quote
- Availability:
- Available
Product Specification
| Specification | Value |
|---|---|
| Continuous Drain Current (ID) | 6.6 A |
| Drain to Source Breakdown Voltage | 100 V |
| Drain to Source Resistance | 28 mΩ |
| Drain to Source Voltage (Vdss) | 100 V |
| Element Configuration | Single |
| Fall Time | 2.2 ns |
| Gate to Source Voltage (Vgs) | 20 V |
| Input Capacitance | 1.49 nF |
| Max Junction Temperature (Tj) | 150 °C |
| Max Operating Temperature | 150 °C |
| Max Power Dissipation | 2.2 W |
| Min Breakdown Voltage | 100 V |
| Min Operating Temperature | -55 °C |
| Number of Channels | 1 |
| Number of Elements | 1 |
| Power Dissipation | 1 W |
| Rds On Max | 28 mΩ |
| Rise Time | 1.9 ns |
| Schedule B | 8541290080, 8541290080|8541290080|8541290080|8541290080|8541290080 |
| Threshold Voltage | 1.4 V |
| Turn-Off Delay Time | 19 ns |
| Turn-On Delay Time | 6.6 ns |
| Case/Package | SOT-223-4 |
| Mount | Surface Mount |
| Number of Pins | 4 |
| Number of Terminals | 4 |
| Weight | 250.2 mg |
| Height | 1.8 mm |
| Length | 3.7 mm |
| Width | 6.7 mm |
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